Imager with variable area color filter array and pixel elements

ABSTRACT

A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a color filter optically aligned with the photosensitive element to filter incident light prior to reaching the photosensitive element. The micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array.

TECHNICAL FIELD

This disclosure relates generally to image sensors, and in particularbut not exclusively, relates to CMOS image sensors with non-rectangularphotosensitive elements.

BACKGROUND INFORMATION

Image sensors have become ubiquitous. They are widely used in digitalstill cameras, cellular phones, security cameras, as well as, medical,automobile, and other applications. The technology used to manufactureimage sensors, and in particular, complementarymetal-oxide-semiconductor (“CMOS”) image sensors (“CIS”), has continuedto advance at great pace. For example, the demands of higher resolutionand lower power consumption have encouraged the further miniaturizationand integration of these image sensors.

One field of application in which size and image quality is particularlyimportant is medical applications (e.g., endoscopes). For medicalapplications the chip must typically be small while providing a highquality image. In order to achieve these characteristics, for a givenchip size, the photosensitive apertures should be as large as possible,while peripheral circuitry should be as limited as possible.

The pixel (picture element) fill factor denotes the fraction of thesurface area of a pixel that is sensitive to light. Pixel pitch is thephysical distance between adjacent pixels in an imaging device. Pixelfill factor has become smaller as pixel pitch has been reduced becausethe active circuit elements and metal interconnect consume an increasingproportion of the area in each pixel as the photosensitive regions arereduced in size. One way to address the loss of fill factor is to use amicroscale lens (microlens) directly above each pixel to focus the lightdirectly towards the photosensitive portion of the area within thepixel. Another way to address the loss of fill factor is to use backsideilluminated (“BSI”) image sensors, which place the active pixel circuitelements and metal interconnects on a frontside of an image sensor dieand the photosensitive element within the substrate facing a backside ofan image sensor die. For BSI image sensors, the majority of photonabsorption occurs near the backside silicon surface. However, a solutionthat provides larger individual pixel area on the same silicon areawould improve BSI image sensors as well as frontside illuminated imagesensors.

BRIEF DESCRIPTION OF THE DRAWINGS

Non-limiting and non-exhaustive embodiments of the invention aredescribed with reference to the following figures, wherein likereference numerals refer to like parts throughout the various viewsunless otherwise specified.

FIG. 1 is a block diagram illustrating a backside illuminated imagingsystem.

FIG. 2 is a circuit diagram illustrating pixel circuitry of two 4Tpixels within a backside illuminated imaging system, in accordance withan embodiment of the invention.

FIG. 3A is a schematic representation of Bayer patterned macropixelblocks.

FIG. 3B is a schematic representation of triangular macropixel blockseach including three micropixels arranged on an X, Y grid, in accordancewith a first embodiment of the invention

FIG. 4A is a schematic representation of Bayer patterned macropixelblocks.

FIG. 4B is a schematic representation of triangular macropixel blockseach including three micropixels arranged on an X, Y grid, in accordancewith a second embodiment of the invention.

FIG. 5A is a schematic representation of Bayer patterned macropixelblocks.

FIG. 5B is a schematic representation of triangular macropixel blockseach including three micropixels arranged on an X, Y grid, in accordancewith a third embodiment of the invention.

FIG. 6A is a schematic representation of Bayer patterned macropixelblocks.

FIG. 6B is a schematic representation of triangular macropixel blockseach including three micropixels arranged on an X, Y, grid, inaccordance with a fourth embodiment of the invention.

FIG. 7 illustrates a conceptual schematic of the active circuits andmetal interconnects for a frontside image sensor, in accordance with anembodiment of the invention.

FIG. 8 illustrates a conceptual schematic of the active circuits andmetal interconnects for a backside illuminated image sensor, inaccordance with an embodiment of the invention.

FIG. 9A is a demonstrative simplified cross-sectional view of afrontside illuminated imaging pixel, in accordance with an embodiment ofthe invention.

FIG. 9B is a demonstrative simplified cross-sectional view of a backsideilluminated imaging pixel, in accordance with an embodiment of theinvention.

DETAILED DESCRIPTION

Embodiments of an apparatus for a backside illuminated (“BSI”) imagesensor with a color filter array of non-rectangular elements aredescribed herein. In the following description numerous specific detailsare set forth to provide a thorough understanding of the embodiments.One skilled in the relevant art will recognize, however, that thetechniques described herein can be practiced without one or more of thespecific details, or with other methods, components, materials, etc. Inother instances, well-known structures, materials, or operations are notshown or described in detail to avoid obscuring certain aspects.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present invention. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments.

FIG. 1 illustrates an embodiment of a BSI image sensor 100 including acolor pixel array 105, readout circuitry 110, function logic 115, andcontrol circuitry 120. Color pixel array 105 is a two-dimensional (“2D”)array of imaging pixels (e.g., pixels P1, P2 . . . , Pn) having X numberof pixel columns (horizontal axis) and Y number of pixel rows (verticalaxis). In one embodiment, each pixel is a complementarymetal-oxide-semiconductor (“CMOS”) imaging pixel. Color pixel array 105may be implemented as either a front side illuminated pixel array or abackside illuminated pixel array. As illustrated, each pixel is arrangedinto a row (e.g., rows R1 to Ry) and a column (e.g., column C1 to Cx) toacquire image data of a person, place, or object, which can then be usedto render a 2D image of the person, place, or object. In one embodiment,color pixel array 105, readout circuitry 105, and control circuitry 120are all integrated onto a single semiconductor die.

After each pixel has acquired its image data or image charge, the imagedata is readout by readout circuitry 110 and transferred to functionlogic 115. Readout circuitry 110 may include amplification circuitry,analog-to-digital (“ADC”) conversion circuitry, or otherwise. Functionlogic 115 may simply store the image data or even manipulate the imagedata by applying post image effects (e.g., crop, rotate, remove red eye,adjust brightness, adjust contrast, or otherwise). Control circuitry 120is coupled to pixel array 105 to control operational characteristic ofcolor pixel array 105. For example, control circuitry 120 may generate ashutter signal for controlling an image acquisition window.

Color pixel array 105 may also be referred to as a color filter array(“CFA”). The CFA may capture color image data using a number oftechniques including additive filters and subtractive filters.Conventional color pixel array patterns are almost exclusively comprisedof identical pixel elements, referred to as micropixels, each having asquare shape and arranged in square X, Y patterns. Hexagonal andoctagonal pixels have been proposed, but repeating pixel units, referredto as macropixels, are usually found in groups of four. The macropixelsare formed of groups of micropixels having a repeating pattern withinthe array. In the vast majority of digital camera image sensors, themost popular CFA is the Bayer pattern. Using a checkerboard pattern withalternating rows of filters, the Bayer pattern has twice as many greenpixels as red or blue pixels. They are arranged in alternating rows, ofred pixels wedged between green pixels and of blue pixels wedged betweengreen pixels. This takes advantage of the human eye's predilection tosee green luminance as the strongest influence in defining sharpness.The Bayer pattern produces identical images regardless of how you holdthe camera—landscape or portrait orientations.

A macropixel that includes four micropixels arranged in an X, Y array isnot flexible to arbitrarily adjust the proportion of colors within themacropixel. Each micropixel represents 25% of the total area, so colorsare assigned in 25% increments. It may be useful to have moreflexibility in the assignment of color proportions in order to optimizean image sensor for various applications, for example, the optimal humanvisual sensitivity may differ from a machine's optimal visualsensitivity.

FIG. 2 is a circuit diagram illustrating pixel circuitry blocks 200 oftwo four-transistor (“4T”) pixels within a BSI imaging array, inaccordance with an embodiment of the invention. Pixel circuitry blocks200 represent one possible pixel circuitry architecture for implementingeach pixel within color pixel array 105 of FIG. 1. However, it should beappreciated that embodiments of the present invention are not limited to4T pixel architectures; rather, one of ordinary skill in the art havingthe benefit of the instant disclosure will understand that the presentteachings are also applicable to 3T designs, 5T designs, and variousother pixel architectures. In FIG. 2, pixels Pa and Pb are arranged intwo rows and one column. The illustrated embodiment of each pixelcircuitry block 200 includes a photosensitive element PD, a transfertransistor T1, a reset transistor T2, a source-follower (“SF”)transistor T3, and a select transistor T4. During operation, transfertransistor T1 receives a transfer signal TX, which transfers the chargeaccumulated in photosensitive element PD to a floating diffusion nodeFD. In one embodiment, floating diffusion node FD may be coupled to astorage capacitor for temporarily storing image charges. Resettransistor T2 is coupled between a power rail VDD and the floatingdiffusion node FD to reset (e.g., discharge or charge the FD to a presetvoltage) under control of a reset signal RST. The floating diffusionnode FD is coupled to control the gate of SF transistor T3. SFtransistor T3 is coupled between the power rail VDD and selecttransistor T4. SF transistor T3 operates as a source-follower providinga high impedance output from the pixel. Finally, select transistor T4selectively couples the output of pixel circuitry 200 to the readoutcolumn line under control of a select signal SEL. In one embodiment, theTX signal, the RST signal, and the SEL signal are generated by controlcircuitry 120.

FIG. 3A illustrates a color pixel array 300 including micropixelsorganized into a Bayer pattern macropixel 310. The Bayer patternmacropixels are located on a uniform X, Y grid within pixel array 105and have a constant separation distance Ip or pitch. Separation distanceIp is determined by measuring the distance between two grid points, suchas grid points 320, each falling at a common reference point withinadjacent macropixels.

It should be noted that in backside illuminated (“BSI”) image sensors,the illumination of photosensitive element PD occurs withoutinterference from any metal or dielectric layers that form, for example,the transistor components of the pixel circuitry and associatedinterconnects, allowing incident light a more direct path through to thephotosensitive element. In a front side illuminated (“FSI”) imagesensor, the photosensitive element is formed on the side of thesemiconductor substrate closest to the polysilicon, dielectric, andmetal layers such that care must be taken to ensure that the metallayers do not interfere with the light collection path.

As mentioned above, with BSI image sensors, incident light has a moredirect path through to photosensitive element PD, which may result in alarger photosensitive element when compared to a pixel cell occupyingthe same area in a FSI image sensor. For simplicity, only the colorfilter (which is placed between photosensitive element PD and theincident light, and allows incident light of a certain wavelength bandthrough to photosensitive element PD) is illustrated in FIGS. 3-6. FIGS.7 and 8 illustrate greater details of the placement and orientations ofthe color filters, transfer transistors, and floating nodes. In FIGS.3-6, the micropixels of individual macropixels are illustrated withoutany space separating adjacent micropixels; however, it should beappreciated that insulating material and/or isolating wells may beplaced between adjacent micropixels within a given macropixel.

A Bayer patterned macropixel is a repeating unit of a color filter array(CFA) for arranging red, green and blue color filters over an array ofphotosensitive elements. When a Bayer patterned sensor's charge is readout, the colors are recorded sequentially line by line. One line may beBGBGBG . . . , followed by a line of GRGRGR . . . , and so forth. Thisis known as sequential RGB.

FIG. 3B illustrates a portion of a color pixel array 350 includingtriangular macropixels 360 each including three micropixels, inaccordance with an embodiment of the invention. The Bayer pattern colorpixel array 105 illustrated in FIG. 1 may be substituted or replaced byembodiments of color pixel array 350. Each triangular macropixel 360 ispartitioned to obtain three micropixels with an approximate fill ratioof red to green to blue micropixels of 1 to 2 to 1, respectively. Eachtriangular macropixel 360 includes two triangular micropixels and onequadrilateral (e.g., square, rectangle, rhombus, parallelogram, or evenan irregular quadrilateral) micropixel. Duplicate triangular macropixelsare arranged on a grid with uniform X and Y separation (e.g., adjacentmacropixels are separated by a uniform distance Ip) as measured fromcommon reference points (e.g., reference point 320). The total area ofthe three micropixels, which form a single triangular macropixel 360, isapproximately the same as that of Bayer patterned macropixel 310 in FIG.3A. In macropixel 360, green color filters are allotted 50% of the totalarea of the macropixel, while red color filters and green color filtersare each allotted 25% of the total area. This is substantiallyequivalent to the Bayer assignments, but with only one pixel assigned togreen color filters. As seen in the patterning of macropixel 360 incolor pixel array 350, each red color filter (also referred to as a redmicropixel) is adjacent to another red micropixel and adjacent to twogreen color filters (also referred to as green micropixels). Each bluecolor filter (also referred to as blue micropixels) is adjacent toanother blue micropixel and two green micropixels, while each greenmicropixel is adjacent to two red micropixels and two blue micropixels.

When referring to “adjacent” micropixels, this is intended to refer tothose micropixels that share at least a portion of a parallel commonside (even if that common side is in practice separated by a gap forisolation barriers/wells, pixel circuitry, etc), but is not intended torefer to micropixels that merely share a common vertex. Note, the phrase“common vertex” is also used broadly to include the overlapping verticesof two proximate/adjacent micropixels even though in practice theirvertices may not actually overlap, but rather are offset due to gapsbetween adjacent/proximate micropixels. Micropixels that either share acommon vertex or at least a portion of a parallel common side without anintervening micropixel are referred to herein as “proximatemicropixels.”

An advantage of triangular macropixel 360 compared to Bayer patternedmacropixel 310 is that since there are only three micropixels in eachtriangular macropixel 360, that means only three sets ofnon-photosensitive pixel circuitry elements (e.g., transfer transistorT1, reset transistor T2, etc. as illustrated in FIG. 2) are includedwithin each triangular macropixel 360. In contrast, there are four setsof non-photosensitive pixel circuitry elements in Bayer patternmacropixel 310. As a result, the fill factor of triangular macropixel360 is greater than the fill factor of Bayer patterned macropixel 310,since less area within each triangular macropixel 360 is devoted tonon-photosensitive elements. The greater fill factor facilitates the useof larger photosensitive elements or photodiodes, which may result in anincrease in the full well capacity (“FWC”) of the photodiode. FWC is themeasure of the amount of charge which can be accumulated in aphotosensitive element (e.g., PD in FIG. 2) before saturation.

FIG. 4A illustrates the same Bayer patterned macropixel 310 forside-by-side comparison against another triangular macropixel 460illustrated in adjacent FIG. 4B. FIG. 4B illustrates a portion of acolor pixel array 450 including triangular macropixels 460 eachincluding three micropixels, in accordance with an embodiment of theinvention. The Bayer pattern color pixel array 105 illustrated in FIG. 1may be substituted or replaced by embodiments of color pixel array 450.Each macropixel 460 is partitioned into three micropixels with anapproximate fill ratio of red to green to blue micropixels of 1 to 2 to1, respectively. Triangular macropixels 460 are similar to triangularmacropixels 360, except that the layout of the red and blue micropixelsis changed. In color pixel array 450, each red micropixel of a giventriangular macropixel 460 is adjacent to a blue micropixel from anadjacent triangular macropixel 460 and two green micropixels (one fromwithin the given triangular macropixel 460 and one from yet anotheradjacent triangular macropixel 460). Each blue micropixel is adjacent toa red micropixel and two green micropixels, while each green micropixelis adjacent two red micropixels and two blue micropixels.

FIG. 5A illustrates the same Bayer patterned macropixel 310 forside-by-side comparison against another triangular macropixel 560illustrated in adjacent FIG. 5B. FIG. 5B illustrates a portion of acolor pixel array 550 including triangular macropixels 560 eachincluding three micropixels, in accordance with an embodiment of theinvention. The Bayer pattern color pixel array 105 illustrated in FIG. 1may be substituted or replaced by embodiments of color pixel array 550.

Triangular macropixel 560 is partitioned into three micropixels with anapproximate fill ratio of red to green to blue micropixels of 1 to 1 to1, respectively. This 1 to 1 to 1 ratio results in three four-sidedpolygon micropixels (e.g., one square, rhombus, or rectangularquadrilateral and two irregular shaped quadrilaterals), as opposed totwo triangular and one quadrilateral micropixels, as illustrated in theembodiments of FIGS. 3B and 4B. The patterning of triangular macropixel560 is similar to the patterning for triangular macropixel 360, exceptthat each red polygon micropixel and each blue polygon micropixel isadjacent to five other polygon micropixels and each green polygonmicropixel is adjacent to four other polygon micropixels.

FIG. 6A illustrates the same Bayer patterned macropixel 310 forside-by-side comparison against another triangular macropixel 660illustrated in adjacent FIG. 6B. FIG. 6B illustrates a portion of acolor pixel array 650 including triangular macropixels 660 eachincluding three micropixels, in accordance with an embodiment of theinvention. The Bayer pattern color pixel array 105 illustrated in FIG. 1may be substituted or replaced by embodiments of color pixel array 650.

Triangular macropixel 660 is partitioned into three micropixels with anapproximate fill ratio of red to green to blue micropixels of 26 to 37to 37, respectively. This partitioning ratio results in one triangularmicropixel (with 26% of the total area of the macropixel) and twofour-sided polygon or quadrilateral micropixels (each with 37% of thetotal area of the macropixel), as illustrated in FIG. 6B. Similar totriangular macropixels 360, each triangular macropixel 660 are arrangedon a grid with uniform X and Y separation having uniform pitch Ip asmeasured from a common reference point within each adjacent macropixel.

Although the triangular macropixels 360, 460, 560, and 660 each have atriangular shape, their layout along with their uniform pitch in the Xand Y axis provides rotational symmetry. In other words, whether or notthe pixel array is rotated by 90 degrees for a portrait or landscapeorientation, vertical and horizontal lines drawn through the middle ofthe pixel array are lines of symmetry. Furthermore, despite thetriangular shape of macropixels 360, 460, 560, and 660, orthogonal X, Yaddressing can still be used by control circuitry 120 or readoutcircuitry 110 to address individual macropixels.

FIG. 7 is a plan view illustrating the active circuit and metalinterconnects for an FSI image sensor 700 implemented using triangularmacropixels, in accordance with an embodiment of the invention. Eachtriangular macropixel 710 may be implemented using any of the abovedescribed triangular macropixel layouts (e.g., triangular macropixels360, 460, 560, or 660). Triangular macropixel 710 includes threemicropixels separated by shallow trench isolations (“STIs”) or isolationwells 720. Transfer gate 730 is located at one corner of eachmicropixel, with one portion of floating node 740 occupying the apex ofeach micropixel that is adjacent to transfer gate 730. As illustrated inFIG. 7, each floating node 740 may be shared between two proximatemicropixels. For example, floating node (or floating diffusion FD) 740Ais shared by two adjacent micropixels on the left from differentmacropixels, floating node 740B is shared by two adjacent micropixels onthe right from different macropixels and floating node 740C is shared bytwo proximate micropixels in the middle top and middle bottom from twodifferent macropixels.

As previously mentioned, the photosensitive elements of a macropixel ina FSI image sensor are typically not covered by polysilicon or metalinterconnects. As such, metal interconnects 750 and 760 are placedaround triangular macropixels 710 and their respective color filters sothat incident light has a direct path through the color filters to theirrespective photosensitive elements below. Metal interconnects 750 and760 may carry control signals (as seen in FIG. 2) such as transfersignal TX, reset signal RST, power rail VDD, address signals or othersignals which may be generated by control circuitry 120 or readoutcircuitry 110 in FIG. 1.

FIG. 8 is a plan view illustrating the active circuit and metalinterconnects for a BSI image sensor 800 implemented using triangularmacropixels, in accordance with an embodiment of the invention. Eachtriangular macropixel 810 may be implemented using any of the abovedescribed triangular macropixel layouts (e.g., triangular macropixels360, 460, 560, or 660). Triangular macropixel 810 includes threemicropixels, separated by STIs or isolation wells 820. A transfer gate830 is located at one corner of each micropixel, with one portion of afloating node 840 occupying the apex of each micropixel that is adjacentto transfer gate 830. As illustrated in FIG. 8, floating node 840 may beshared between two proximate micropixels. In the illustrated embodiment,two micropixels share floating node 840; however, in alternativeembodiments any number between one and six micropixels may share asingle floating node 840. For example, if all six micropixelssurrounding a single centralized floating node, then a six-share pixelread out may be implemented. In this six-share pixel read outembodiment, micropixels 871 thru 876 could share one central floatingnode. In contrast, with Bayer patterned macropixel 310 illustrated inFIG. 3A, at most four micropixels could share a single floating node.

The illumination of a photosensitive element of a BSI image sensoroccurs without interference from any frontside metal interconnects ordielectric layers, therefore there are fewer restrictions on theplacement of metal interconnects 850 and 860. Metal interconnects 850and 860 need not routed around the perimeter of macropixels includingtheir color filters. Metal interconnects 850 and 860 may carry controlsignals (as seen in FIG. 2) such as transfer signal TX, reset signalRST, power rail VDD, address signals or other signals which may begenerated by control circuitry 120 or readout circuitry 110 in FIG. 1.

FIGS. 9A and 9B are demonstrative simplified cross-sectional views of anFSI imaging pixel 905 and a BSI imaging pixel 910, respectively, inaccordance with embodiments of the invention. The color filters ineither FSI imaging pixel 905 or BSI imaging pixel 910 may be patternedusing any triangular macropixel layouts described above. As illustratedin FIG. 9A, the color filter of FSI imaging pixel 905 is disposed abovethe metal stack on the frontside of the die, while the color filter ofBSI imaging pixel 910 is disposed below the EPI layer/substrate on thebackside of the die opposite the metal stack used for routing signals(e.g., metal interconnects 850 and 860 illustrated in FIG. 8).

It should be noted that the above description assumes implementation ofimage sensors using red, green and blue photosensitive elements. Thoseskilled in the art having benefit of the instant disclosure willappreciate that the description is also applicable to other primary orcomplementary color filters. For example, magenta, yellow and cyan are aset of common alternative complementary colors that can be used toproduce color images. In addition, having a set of green photosensitiveelements interleaved or interspersed with alternating red and bluephotosensitive elements is also not necessary, though suchconfigurations are common since the human vision system is moresensitive to colors in the green band than other colors in the visualspectrum.

The above description of illustrated embodiments of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific embodiments of, and examples for, the invention aredescribed herein for illustrative purposes, various modifications arepossible within the scope of the invention, as those skilled in therelevant art will recognize.

These modifications can be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific embodimentsdisclosed in the specification. Rather, the scope of the invention is tobe determined entirely by the following claims, which are to beconstrued in accordance with established doctrines of claiminterpretation.

1. A color pixel array including a plurality of micropixels, the color pixel array comprising: a plurality of photosensitive elements each being included within one of the micropixels; and a color filter array including a plurality of color filters each being included within one of the micropixels, the color filters being optically aligned with the photosensitive elements to filter incident light prior to reaching the photosensitive elements, wherein the micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array.
 2. The color pixel array of claim 1, wherein each of the triangular macropixels includes three of the micropixels.
 3. The color pixel array of claim 2, wherein the triangular macropixels are orthogonally addressable.
 4. The color pixel array of claim 3, wherein the color filter array is rotationally symmetric.
 5. The color pixel array of claim 2, wherein the triangular macropixels are patterned into a horizontal and vertical grid with a uniform separation pitch along at least one axis measured from a common reference point within each of the triangular macropixels.
 6. The color pixel array of claim 5, wherein each of the triangular macropixels includes a single quadrilateral micropixel and two triangular micropixels.
 7. The color pixel array of claim 6, wherein the square micropixel comprises a green micropixel having a green color filter and the triangular micropixels comprise a red micropixel having a red color filter and a blue micropixel having a blue color filter, wherein a fill ratio between the red, green, and blue micropixels is approximately 1 to 2 to 1, respectively.
 8. The color pixel array of claim 7, wherein each red micropixel of a given triangular macropixel is adjacent to another red micropixel within another triangular macropixel.
 9. The color pixel array of claim 7, wherein each red micropixel of a given triangular macropixel is adjacent to the blue micropixel within another triangular macropixel.
 10. The color pixel array of claim 5, wherein each of the triangular macropixels includes a single quadrilateral micropixel and two irregular quadrilateral micropixels.
 11. The color pixel array of claim 10, wherein a fill ratio between the square micropixel and the two irregular quadrilateral micropixels is approximately 1 to 1 to
 1. 12. The color pixel array of claim 5, wherein each of the triangular macropixels includes a single triangular micropixel and two irregular quadrilateral micropixels.
 13. The color pixel array of claim 5, wherein each of the micropixels includes a transfer transistor coupling one of the photosensitive elements to a floating diffusion, wherein each of the micropixels shares the floating diffusion with another micropixel from a different one of the triangular macropixels.
 14. The color pixel array of claim 13, wherein each of the micropixels shares the floating diffusion with five other micropixels from five other triangular macropixels.
 15. The color pixel array of claim 1, wherein the color pixel array is disposed within a complementary metal-oxide semiconductor frontside illuminated image sensor.
 16. The color pixel array of claim 1, wherein the color pixel array is disposed within a complementary metal-oxide semiconductor backside illuminated image sensor.
 17. An image sensor, comprising: a color pixel array including a plurality of micropixels, wherein groups of the micropixels are organized into a non-square repeating pattern of macropixels, wherein each of the macropixels includes three of the micropixels; control circuitry coupled to the color pixel array to control operation of the color pixel array; and readout circuitry coupled to the color pixel array to readout color image data from the color pixel array.
 18. The image sensor of claim 17, wherein the macropixels are each triangularly shaped.
 19. The image sensor of claim 18, wherein the macropixels are patterned to be addressable using orthogonal X, Y coordinates.
 20. The image sensor of claim 18, wherein each of the macropixels includes a single quadrilateral micropixel and two triangular micropixels.
 21. The image sensor of claim 18, wherein each of the macropixels includes a single quadrilateral micropixel and two irregular quadrilateral micropixels.
 22. The image sensor of claim 18, wherein each of the macropixels includes a single triangular micropixel and two irregular quadrilateral micropixels.
 23. The color pixel array of claim 18, wherein each of the micropixels includes a transfer transistor coupling a photosensitive element to a floating diffusion, wherein each of the micropixels shares the floating diffusion with another micropixel from a different one of the macropixels.
 24. The color pixel array of claim 23, wherein each of the micropixels shares the floating diffusion with five other micropixels from five other macropixels. 